STGP18N40LZ Todos los transistores

 

STGP18N40LZ IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGP18N40LZ

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 360 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 12 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃

trⓘ - Tiempo de subida, typ: 3500 nS

Coesⓘ - Capacitancia de salida, typ: 90 pF

Encapsulados: TO220

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STGP18N40LZ datasheet

 ..1. Size:890K  st
stgb18n40lz stgd18n40lz stgp18n40lz.pdf pdf_icon

STGP18N40LZ

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

 ..2. Size:888K  st
stgp18n40lz.pdf pdf_icon

STGP18N40LZ

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

 ..3. Size:887K  st
stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf pdf_icon

STGP18N40LZ

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB

 9.1. Size:711K  st
stgb19nc60hdt4 stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf pdf_icon

STGP18N40LZ

STGB19NC60HDT4, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with ultrafast diode Datasheet - production data Features TAB Low on-voltage drop (VCE(sat)) Very soft ultrafast recovery anti-parallel diode 3 3 1 2 1 Applications D PAK TO-220FP TAB High frequency motor drives SMPS and PFC in both hard switch and resonant topologies 3 2 3

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History: MUBW75-12T8 | STGP10NC60HD | STGP10NB60S

 

 

 


History: MUBW75-12T8 | STGP10NC60HD | STGP10NB60S

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