STGW30N90D Todos los transistores

 

STGW30N90D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW30N90D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 220 W

|Vce|ⓘ - Tensión máxima colector-emisor: 900 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Coesⓘ - Capacitancia de salida, typ: 175 pF

Encapsulados: TO247

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STGW30N90D datasheet

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stgw30n90d.pdf pdf_icon

STGW30N90D

STGW30N90D 30 A, 900 V very fast IGBT Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability Low gate charge Ideal for soft switching application 3 2 1 Application TO-247 Induction heating Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagram bet

 7.1. Size:328K  st
stgw30nb60hd.pdf pdf_icon

STGW30N90D

STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH IGBT TYPE VCES VCE(sat) (Max) IC STGW30NB60HD 600 V

 7.2. Size:300K  st
stgw30nb60h.pdf pdf_icon

STGW30N90D

STGW30NB60H N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT TYPE VCES VCE(sat) IC STGW30NB60H 600 V

 7.3. Size:419K  st
stgw30n120kd.pdf pdf_icon

STGW30N90D

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short

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