STGW50HF60S Todos los transistores

 

STGW50HF60S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGW50HF60S
   Tipo de transistor: IGBT
   Código de marcado: GW50HF60S
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 284 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 110 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.15 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 400 pF
   Qgⓘ - Carga total de la puerta, typ: 200 nC
   Paquete / Cubierta: TO247
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STGW50HF60S Datasheet (PDF)

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 stgw50hf60s.pdf pdf_icon

STGW50HF60S

STGW50HF60S60 A, 600 V, very low drop IGBTFeatures Very low on-state voltage drop Low switching off High current capabilityApplications32 PV inverter1 UPSTO-247DescriptionSTGW50HF60S is a very low drop IGBT based on new advanced planar technology, showing Figure 1. Internal schematic diagramextremely low on-state voltage and limited turn-off lo

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 stgw50hf60sd.pdf pdf_icon

STGW50HF60S

STGW50HF60SD60 A, 600 V, very low drop IGBTwith soft and fast recovery diodeFeatures Very low on-state voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode3Application21 PV inverterTO-247 UPSDescriptionSTGW50HF60SD is a very low drop IGBT based on new advanced planar technology, showing Figu

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 stgw50hf65sd.pdf pdf_icon

STGW50HF60S

STGW50HF65SD STGWT50HF65SD60 A, 650 V, very low drop IGBT with soft and fast recovery diodeDatasheet - preliminary dataFeatures Very low on-state voltage drop Low switching off High current capability Very soft Ultrafast recovery antiparallel diode32312Applications1 PV inverterTO-3PTO-247 UPSDescriptionFigure 1. Internal schematic di

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 stgw50h60df.pdf pdf_icon

STGW50HF60S

STGW50H60DF50 A, 600 V field stop trench gate IGBT with Ultrafast diodeDatasheet - production dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time32 Ultrafast soft recovery antiparallel diode1 Lead free packageTO-247Applications Photovoltaic inverters

MOSTRAR MÁS

Otros transistores... STGW40NC60V , STGW40NC60W , STGW40NC60WD , STGW45HF60WD , STGW45HF60WDI , STGW45NC60VD , STGW45NC60WD , STGW50H60DF , FGH30S130P , STGW50HF60SD , STGW50NC60W , STGW60H65F , STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD .

 

 
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