STGWA60NC60WDR Todos los transistores

 

STGWA60NC60WDR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA60NC60WDR
   Tipo de transistor: IGBT + Diode
   Código de marcado: GWA60NC60WDR
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 340 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.75 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 410 pF
   Qgⓘ - Carga total de la puerta, typ: 195 nC
   Paquete / Cubierta: TO247
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STGWA60NC60WDR Datasheet (PDF)

 ..1. Size:779K  st
stgwa60nc60wdr.pdf pdf_icon

STGWA60NC60WDR

STGWA60NC60WDR60 A, 600 V, ultrafast IGBTFeatures Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode32Applications1 WeldingTO-247 long leads Power factor correction SMPS High frequency inverter/converterFigure 1. Internal schematic diagramDescriptionThis

 7.1. Size:685K  st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf pdf_icon

STGWA60NC60WDR

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral

 7.2. Size:1625K  st
stgw60v60df stgwa60v60df stgwt60v60df.pdf pdf_icon

STGWA60NC60WDR

STGW60V60DF, STGWA60V60DF STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A332211 Tight parameter distributionTO-247TO-247 long leads Safe parallelingTAB Low thermal resistan

 7.3. Size:1574K  st
stgwa60h65dfb.pdf pdf_icon

STGWA60NC60WDR

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling

Otros transistores... STGW45NC60VD , STGW45NC60WD , STGW50H60DF , STGW50HF60S , STGW50HF60SD , STGW50NC60W , STGW60H65F , STGWA19NC60HD , NCE80TD65BT , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , IKW15T120 .

 

 
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