IKW25T120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW25T120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 190 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 96 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
IKW25T120 Datasheet (PDF)
ikw25t120.pdf

IKW25T120TrenchStop SeriesLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeC Approx. 1.0V reduced VCE(sat)and 0.5V reduced VF compared to BUP314D Short circuit withstand time 10sGE Designed for :- Frequency Converters- Uninterrupted Power Supply TrenchStop and Fields
ikw25t120 rev2g 2.pdf

IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time 10s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst
ikw25n120h3 rev1 2g.pdf

IKW25N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app
ikw25n120t2 rev2 1.pdf

IKW25N120T2 TrenchStop 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very tight parameter distribution
Otros transistores... STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , IKW15T120 , RJH60F7BDPQ-A0 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T .
History: IKU06N60R | FGH30N120FTD | GT45G128 | APT13GP120BDF1 | SKB06N60 | AOK40B60D | IKB20N60H3
History: IKU06N60R | FGH30N120FTD | GT45G128 | APT13GP120BDF1 | SKB06N60 | AOK40B60D | IKB20N60H3



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
irf630 datasheet | mpsa13 equivalent | c5198 | 2sc1969 transistor | bcy21 | s8550 datasheet | mj50ac100 | 2sc1318 replacement