IKW25T120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW25T120  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 190 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 96 pF

Encapsulados: TO247

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IKW25T120 datasheet

 ..1. Size:511K  infineon
 ikw25t120.pdf pdf_icon

IKW25T120

IKW25T120 TrenchStop Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fields

 ..2. Size:368K  infineon
 ikw25t120 rev2g 2.pdf pdf_icon

IKW25T120

IKW25T120 TrenchStop Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst

 9.1. Size:828K  infineon
 ikw25n120h3 rev1 2g.pdf pdf_icon

IKW25T120

IKW25N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRENCHSTOPTM technology offering very low V CEsat G E low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175 C qualified according to JEDEC for target app

 9.2. Size:370K  infineon
 ikw25n120t2 rev2 1.pdf pdf_icon

IKW25T120

IKW25N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very tight parameter distribution

MOSTRAR MÁS

Otros transistores... STGWF30NC60S, STGWT38IH130D, STGY40NC60VD, STGY50NC60WD, IKW30N100T, IKW08T120, SKW30N60HS, IKW15T120, BT60T60ANFK, IKW40T120, IKA06N60T, IKB06N60T, IKA10N60T, IKB10N60T, IKA15N60T, IKB15N60T, IKB20N60T