IKW40T120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40T120
Tipo de transistor: IGBT + Diode
Código de marcado: K40T120
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 270 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 34 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Qgⓘ - Carga total de la puerta, typ: 203 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW40T120 - IGBT
IKW40T120 Datasheet (PDF)
ikw40t120.pdf
IKW40T120TrenchStop SeriesLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeC Best in class TO247 Short circuit withstand time 10s Designed for : GE- Frequency Converters- Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applicationsoffers :-
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ikw40n120t2 .pdf
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ikw40n65f5a.pdf
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aikw40n65dh5.pdf
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ikw40n65f5.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP40N65F5, IKW40N65F5650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP40N65F5, IKW40N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1
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