IKB20N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKB20N60T
Tipo de transistor: IGBT + Diode
Código de marcado: K20T60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 166 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 14 nS
Coesⓘ - Capacitancia de salida, typ: 71 pF
Qgⓘ - Carga total de la puerta, typ: 120 nC
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IKB20N60T IGBT
IKB20N60T Datasheet (PDF)
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Otros transistores... IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , RJP63K2DPP-M0 , IKW20N60T , IKW30N60T , SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 .
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