IKW20N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW20N60T
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 166 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 14 nS
Coesⓘ - Capacitancia de salida, typ: 71 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
IKW20N60T Datasheet (PDF)
ikp20n60t ikb20n60t ikw20n60t.pdf

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and F
ikp20n60t ikw20n60t rev2 5g.pdf

IKP20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop an
ikw20n60t.pdf

IKW20N60TTRENCHSTOP SeriesLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175CG Short circuit withstand time 5sE Designed for :- Frequency Converters- Uninterrupted Power Supply TRENCHSTOP a
aikw20n60ct.pdf

AIKW20N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor
Otros transistores... IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , FGH40N60UFD , IKW30N60T , SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 .
History: APT44GA60S | APT100GT120JU2 | IRG6I330U | HGTG27N60C3DR | AOD5B65M1
History: APT44GA60S | APT100GT120JU2 | IRG6I330U | HGTG27N60C3DR | AOD5B65M1



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