IHW40T120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW40T120  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 270 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 34 nS

Coesⓘ - Capacitancia de salida, typ: 130 pF

Encapsulados: TO247

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IHW40T120 datasheet

 ..1. Size:354K  infineon
ihw40t120 d18g.pdf pdf_icon

IHW40T120

IHW40T120 Soft Switching Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for - Soft Switching Applications G E - Induction Heating TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distrib

 ..2. Size:352K  infineon
ihw40t120.pdf pdf_icon

IHW40T120

IHW40T120 Soft Switching Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for - Soft Switching Applications G E - Induction Heating TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distrib

 8.1. Size:577K  infineon
ihw40t60.pdf pdf_icon

IHW40T120

IHW40T60 TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features Very low VCE(sat) 1.5V (typ.) Maximum junction temperature 175 C G E Short circuit withstand time 5 s TRENCHSTOP and fieldstop technology for 600V applications offers - very tight parameter distribu

 8.2. Size:456K  infineon
ihw40t60 rev2 0.pdf pdf_icon

IHW40T120

IHW40T60 TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop -technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5 s G E Trench and fieldstop technology for 600 V applications offers - very tight parameter distribution

Otros transistores... SKB06N60HS, IKA03N120H2, IKB03N120H2, IKW03N120H2, IHW30N100R, IHW30N90R, IHW30N60T, IHW30N160R2, G50T65D, IHW30N100T, IHW30N90T, IHW40N60T, IHW40T60, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2