IKD10N60R - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKD10N60R
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 10 nS
Coesⓘ - Capacitancia de salida, typ: 37 pF
Paquete / Cubierta: TO252
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IKD10N60R Datasheet (PDF)
ikd10n60r.pdf
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ikd10n60r iku10n60r.pdf
IGBTIGBT with integrated diode in packages offering space saving advantageIKD10N60R, IKU10N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsDatasheetIndustrial & MultimarketIKD10N60R, IKU10N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (R
ikd10n60ra.pdf
IGBTIGBT with integrated diode in packages offering space saving advantageIKD10N60RA600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD10N60RATRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 6
Otros transistores... IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , XNF15N60T , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2