SGW15N120 Todos los transistores

 

SGW15N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGW15N120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 198 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 23 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO247
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SGW15N120 Datasheet (PDF)

 ..1. Size:332K  infineon
 sgp15n120 sgw15n120.pdf pdf_icon

SGW15N120

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 ..2. Size:332K  infineon
 sgp15n120 sgw15n120 rev2.pdf pdf_icon

SGW15N120

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 ..3. Size:402K  infineon
 sgp15n120 sgw15n120 rev2 6.pdf pdf_icon

SGW15N120

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

 ..4. Size:402K  infineon
 sgw15n120.pdf pdf_icon

SGW15N120

SGP15N120 SGW15N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-

MOSTRAR MÁS

Otros transistores... SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , GT30F124 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 .

History: SGT15T60SD1STR | OST80N65HMF | MMG50A120B7HN | IRG4PC30U | SSG55N60M | OST75N65HSXF | CPV364M4KPBF

 

 
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