SGB20N60 Todos los transistores

 

SGB20N60 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGB20N60

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 179 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 107 pF

Encapsulados: TO263

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SGB20N60 datasheet

 ..1. Size:790K  infineon
 sgb20n60 .pdf pdf_icon

SGB20N60

SGB20N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for E - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

 ..2. Size:787K  infineon
 sgb20n60.pdf pdf_icon

SGB20N60

SGB20N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for E - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

Otros transistores... SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , FGH60N60SMD , SGW20N60 , SGB30N60 , SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 .

History: SGP02N120 | IGB01N120H2

 

 

 


 
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