SGB30N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGB30N60  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 34 nS

Coesⓘ - Capacitancia de salida, typ: 150 pF

Encapsulados: TO263

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SGB30N60 datasheet

 ..1. Size:376K  infineon
 sgb30n60 .pdf pdf_icon

SGB30N60

SGB30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

 ..2. Size:374K  infineon
 sgb30n60.pdf pdf_icon

SGB30N60

SGB30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

Otros transistores... SGW15N120, SGB10N60A, SGW25N120, SGW10N60A, SGB15N60, SGW15N60, SGB20N60, SGW20N60, FGD4536, SGW30N60, SGP02N60, SGP04N60, SGP06N60, SGP15N60, SGP20N60, SGP30N60, SGI02N120