GT30J311 Todos los transistores

 

GT30J311 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GT30J311
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 145 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 120 nS
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de GT30J311 - IGBT

 

GT30J311 Datasheet (PDF)

 8.1. Size:190K  toshiba
gt30j324.pdf

GT30J311
GT30J311

GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (ty

 8.2. Size:415K  toshiba
gt30j322.pdf

GT30J311
GT30J311

GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25

 8.3. Size:502K  toshiba
gt30j301.pdf

GT30J311
GT30J311

GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHA

Otros transistores... GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , IRG7IC28U , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 , GT50G102 , GT50J101 , GT50J102 .

 

 
Back to Top

 


GT30J311
  GT30J311
  GT30J311
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top