IGW25N120H3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW25N120H3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 326 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
trⓘ - Tiempo de subida, typ: 41 nS
Coesⓘ - Capacitancia de salida, typ: 95 pF
Encapsulados: TO247
Búsqueda de reemplazo de IGW25N120H3 IGBT
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IGW25N120H3 datasheet
igw25n120h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial Power Control IGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features C TRENC
igw25n120h3 .pdf
IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features C TRENC
igw25t120.pdf
IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior NPT
igw25t120 rev2 4g.pdf
IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior NPT
Otros transistores... SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IRG7R313U , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 .
History: IGA03N120H2 | SGW30N60 | IGB03N120H2
History: IGA03N120H2 | SGW30N60 | IGB03N120H2
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