IGW15N120H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW15N120H3
Tipo de transistor: IGBT
Código de marcado: G15H1203
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 217 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 34 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Qgⓘ - Carga total de la puerta, typ: 75 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IGW15N120H3 - IGBT
IGW15N120H3 Datasheet (PDF)
igw15n120h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW15N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIGW15N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junc
igw15t120 rev2 5g.pdf
IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Approx. 1.0V reduced VCE(sat) compared to BUP313 Short circuit withstand time 10s G Designed for :E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution
igw15t120.pdf
IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Approx. 1.0V reduced VCE(sat) compared to BUP313 Short circuit withstand time 10s G Designed for :E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution
Otros transistores... IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IRG7R313U , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2