IGW40N120H3 Todos los transistores

 

IGW40N120H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW40N120H3
   Tipo de transistor: IGBT
   Código de marcado: G40H1203
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 483 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 57 nS
   Coesⓘ - Capacitancia de salida, typ: 150 pF
   Qgⓘ - Carga total de la puerta, typ: 185 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IGW40N120H3 Datasheet (PDF)

 ..1. Size:1892K  infineon
igw40n120h3.pdf pdf_icon

IGW40N120H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW40N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIGW40N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC

 8.1. Size:1684K  infineon
igw40n60h3 rev2 1g.pdf pdf_icon

IGW40N120H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW40N60H3600V IGBTHigh speed switching series third generationData SheetIndustrial & MultimarketIGW40N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175

 8.2. Size:1458K  infineon
igw40n60dtp.pdf pdf_icon

IGW40N120H3

IGBTTRENCHSTOPTM Performance technologyIGW40N60DTP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW40N60TPTRENCHSTOPTM Performance Series600V DuoPack IGBTTRENCHSTOPTM Performance seriesFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction tempera

 8.3. Size:2250K  infineon
igp40n65f5 igw40n65f5.pdf pdf_icon

IGW40N120H3

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP40N65F5, IGW40N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP40N65F5, IGW40N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in har

Otros transistores... IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , CRG60T60AN3H , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 .

 

 
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