IGW40T120 Todos los transistores

 

IGW40T120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW40T120
   Tipo de transistor: IGBT
   Código de marcado: G40T120
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 270 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 130 nS
   Qgⓘ - Carga total de la puerta, typ: 203 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IGW40T120 Datasheet (PDF)

 ..1. Size:351K  infineon
igw40t120 rev2 4g.pdf pdf_icon

IGW40T120

IGW40T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s G Designed for :E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior N

 ..2. Size:301K  infineon
igw40t120.pdf pdf_icon

IGW40T120

IGW40T120TrenchStop SeriesLow Loss IGBT in TrenchStop and Fieldstop technologyC Short circuit withstand time 10sG Designed for :E- Frequency Converters- Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applicationsoffers :- very tight parameter distribution- high ruggedness, temperature stable behavior NPT technology

 9.1. Size:1684K  infineon
igw40n60h3 rev2 1g.pdf pdf_icon

IGW40T120

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW40N60H3600V IGBTHigh speed switching series third generationData SheetIndustrial & MultimarketIGW40N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175

 9.2. Size:1458K  infineon
igw40n60dtp.pdf pdf_icon

IGW40T120

IGBTTRENCHSTOPTM Performance technologyIGW40N60DTP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW40N60TPTRENCHSTOPTM Performance Series600V DuoPack IGBTTRENCHSTOPTM Performance seriesFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction tempera

Otros transistores... IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , JT075N065WED , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A .

History: RGS80TSX2DHR | BG150B12UY3-I | MWI35-12A7 | IXGH60N60B2 | 1MBI200SA-120

 

 
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History: RGS80TSX2DHR | BG150B12UY3-I | MWI35-12A7 | IXGH60N60B2 | 1MBI200SA-120

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