IGW15T120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW15T120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 110 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Encapsulados: TO247
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IGW15T120 datasheet
igw15t120 rev2 5g.pdf
IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Approx. 1.0V reduced VCE(sat) compared to BUP313 Short circuit withstand time 10 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distribution
igw15t120.pdf
IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Approx. 1.0V reduced VCE(sat) compared to BUP313 Short circuit withstand time 10 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distribution
igw15n120h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW15N120H3 1200V high speed switching series third generation Data sheet Industrial Power Control IGW15N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junc
Otros transistores... IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , YGW40N65F1 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T .
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