BSM50GAL120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSM 50 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GAL 120 DN2 1200V 78A HALF BRIDGE GAL 1 C67076-A2010-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 2

BSM 50 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GB 120 DN2 1200V 78A HALF-BRIDGE 1 C67076-A2105-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

BSM 50 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-

Technische Information / Technical InformationIGBT-ModuleBSM 50 GD 60 DLC E3226IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 80C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 70 APeriodischer Kollektor Spitzenst

Technische Information / Technical InformationIGBT-ModuleBSM50GP60GIGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauerg

Technische Information / Technical InformationIGBT-ModuleBSM50GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauerg

BSM 50 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 27 OhmType VCE IC Package Ordering CodeBSM 50 GB 170 DN2 1700V 72A HALF-BRIDGE 1 C67070-A2701-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700Gat

Technische Information / Technical InformationIGBT-ModuleBSM 50 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 80C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 70 APeriodischer Kollektor Spitzenstromt

Technische Information / Technical InformationIGBT-ModuleBSM 50 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 80C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 75 APeriodischer Kollektor Spitzenstromt

Technische Information / Technical InformationIGBT-ModuleBSM50GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 85 APeriodischer Kollektor Spitzenstrom

BSM 50 GD 120 DN2GIGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate

European Power-Semiconductor andElectronics CompanyMarketing InformationBSM 50 GD 170 DL118.1194.5119121.599.94 x 19.05 = 76.219.05 3.8119 1817 16 151 2 3 4 5 6 7 8 9 10 11 123.81 1.15x1.015.245 x 15.24 =76.2110connections to be made externally21131 592 6 101917153 11748 12201401.07.1998BSM 50 GD 170 DL vorlufige DatenH

-40...+1252006-02-012006-02-012006-02-012006-02-012006-02-012006-02-012006-02-012006-02-01BSM 50 GD 120 DN2 E3226Gehusemae / SchaltbildPackage outline / Circuit diagramm9 2006-02-01Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fr technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit

Technische Information / Technical InformationIGBT-ModuleBSM50GB120DLCIGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 115 A

Technische Information / Technical InformationIGBT-ModuleBSM50GP60IGBT-ModulesModul Isolation/ Module IsolationIsolations-Prfspannung RMS, f = 50 Hz, t = 1 min.VISOL 2,5 kVinsulation test voltage NTC connected to BaseplateElektrische Eigenschaften / Electrical propertiesCharakteristische Werte / Characteristic valuesmin. typ. max.Diode Gleichrichter/ Diode RectifierDu