BSM50GAL120DN2 Todos los transistores

BSM 50 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GAL 120 DN2 1200V 78A HALF BRIDGE GAL 1 C67076-A2010-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 2

BSM 50 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GB 120 DN2 1200V 78A HALF-BRIDGE 1 C67076-A2105-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

BSM 50 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-

Technische Information / Technical Information IGBT-Module BSM 50 GD 60 DLC E3226 IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC= 25 C IC 70 A Periodischer Kollektor Spitzenst

Technische Information / Technical Information IGBT-Module BSM50GP60G IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauerg

Technische Information / Technical Information IGBT-Module BSM50GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauerg

BSM 50 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 27 Ohm Type VCE IC Package Ordering Code BSM 50 GB 170 DN2 1700V 72A HALF-BRIDGE 1 C67070-A2701-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage VCGR RGE = 20 k 1700 Gat

Technische Information / Technical Information IGBT-Module BSM 50 GD 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC= 25 C IC 70 A Periodischer Kollektor Spitzenstrom t

Technische Information / Technical Information IGBT-Module BSM 50 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 75 A Periodischer Kollektor Spitzenstrom t

Technische Information / Technical Information IGBT-Module BSM50GD120DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 85 A Periodischer Kollektor Spitzenstrom

BSM 50 GD 120 DN2G IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate

-40...+125 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 BSM 50 GD 120 DN2 E3226 Geh usema e / Schaltbild Package outline / Circuit diagramm 9 2006-02-01 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlie lich f r technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit

Technische Information / Technical Information IGBT-Module BSM50GB120DLC IGBT-Modules vorl ufige Daten preliminary data H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 115 A

Technische Information / Technical Information IGBT-Module BSM50GP60 IGBT-Modules Modul Isolation/ Module Isolation Isolations-Pr fspannung RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV insulation test voltage NTC connected to Baseplate Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. Diode Gleichrichter/ Diode Rectifier Du