IGB50N60T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGB50N60T
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 333 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
trⓘ - Tiempo de subida, typ: 29 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Encapsulados: TO263
Búsqueda de reemplazo de IGB50N60T IGBT
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IGB50N60T datasheet
igb50n60t.pdf
IGB50N60T TRENCHSTOP Series p Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features C C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G G Designed for frequency inverters for washing machines, fans, E E pumps and vacuum cleaners TRENCHSTOP technology for 600V application
igb50n60t rev2 5g.pdf
IGB50N60T TrenchStop Series p Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners TrenchStop technology for 600 V applications offers - very tight parameter distr
igb50n65s5.pdf
IGB50N65S5 High speed switching series fifth generation TRENCHSTOPTM 5 high speed soft switching IGBT Features and Benefits C High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal current CEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q E G Maxim
igb50n65h5.pdf
IGB50N65H5 High speed switching series fifth generation High speed IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low Q G G Maximum junction temperature 175 C E Pb-free lead plating; RoHS compliant Complete product spectrum
Otros transistores... IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , RJH60F7BDPQ-A0 , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S .
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