IGW75N60T Todos los transistores

 

IGW75N60T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGW75N60T

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 428 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 118 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 36 nS

Coesⓘ - Capacitancia de salida, typ: 288 pF

Encapsulados: TO247

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IGW75N60T datasheet

 ..1. Size:479K  infineon
igw75n60t.pdf pdf_icon

IGW75N60T

IGW75N60T TRENCHSTOP Series q Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers

 ..2. Size:397K  infineon
igw75n60t rev2 5g.pdf pdf_icon

IGW75N60T

IGW75N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers PG-TO-247-3

 6.1. Size:1543K  infineon
igw75n60h3.pdf pdf_icon

IGW75N60T

IGBT High speed IGBT in Trench and Fieldstop technology IGW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IGW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C

 7.1. Size:1756K  infineon
igw75n65h5.pdf pdf_icon

IGW75N60T

IGW75N65H5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q E G Maximum junction temperature 175 C Qualified accord

Otros transistores... IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IKW30N60H3 , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S .

 

 

 


 
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