IGW75N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW75N60T
Tipo de transistor: IGBT
Código de marcado: G75T60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 428 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 118 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 288 pF
Qgⓘ - Carga total de la puerta, typ: 470 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IGW75N60T - IGBT
IGW75N60T Datasheet (PDF)
igw75n60t.pdf
IGW75N60T TRENCHSTOP Series q Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :
igw75n60t rev2 5g.pdf
IGW75N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : PG-TO-247-3
igw75n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW75N60H3600V high speed switching series third generationData sheetIndustrial & MultimarketIGW75N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C
igw75n65h5.pdf
IGW75N65H5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maximum junction temperature 175C Qualified accord
Otros transistores... IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IKW50N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S .
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