AUIRG4BC30U-S Todos los transistores

 

AUIRG4BC30U-S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRG4BC30U-S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 9.6 nS
   Coesⓘ - Capacitancia de salida, typ: 73 pF
   Qgⓘ - Carga total de la puerta, typ: 50 nC
   Paquete / Cubierta: D2PAK

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AUIRG4BC30U-S Datasheet (PDF)

 ..1. Size:324K  international rectifier
auirg4bc30u-s.pdf

AUIRG4BC30U-S
AUIRG4BC30U-S

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

 4.1. Size:301K  international rectifier
auirg4bc30s-s.pdf

AUIRG4BC30U-S
AUIRG4BC30U-S

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 4.2. Size:301K  infineon
auirg4bc30s-s auirg4bc30s-sl.pdf

AUIRG4BC30U-S
AUIRG4BC30U-S

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 8.1. Size:408K  international rectifier
auirg4pc40s-e.pdf

AUIRG4BC30U-S
AUIRG4BC30U-S

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

 8.2. Size:295K  international rectifier
auirg4ph50s.pdf

AUIRG4BC30U-S
AUIRG4BC30U-S

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

 8.3. Size:398K  infineon
auirg4pc40s-e.pdf

AUIRG4BC30U-S
AUIRG4BC30U-S

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

 8.4. Size:280K  infineon
auirg4ph50s.pdf

AUIRG4BC30U-S
AUIRG4BC30U-S

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

Otros transistores... IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , GT30F125 , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D , AUIRGP35B60PD , AUIRGP35B60PD-E , AUIRGP4062D , AUIRGP4063D , AUIRGP4066D1 .

 

 
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