AUIRGP35B60PD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 97675AUTOMOTIVE GRADEAUIRGP35B60PDWARP2 SERIES IGBT WITHC VCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 1.85VFeatures@ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT)Equivalent MOSFET Lower Parasitic CapacitancesG Minimal Tail CurrentParameters HEXFRED Ultra Fast Soft-Recovery Co-Pack DiodeRCE(on)

PD - 97619AUTOMOTIVE GRADEAUIRGP35B60PD-EWARP2 SERIES IGBT WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 1.85VFeatures@ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT)Equivalent MOSFET Lower Parasitic CapacitancesGParameters Minimal Tail CurrentRCE(on) typ. = 84m HEXFRED Ultra Fast Soft-Recov

AUIRGP65G40D0AUTOMOTIVE GRADEAUIRGF65G40D0ULTRAFAST IGBT WITHCooliRIGBT ULTRAFAST SOFT RECOVERY DIODEFeaturesC Designed And Qualified for Automotive ApplicationsVCES = 600V Ultra Fast Switching IGBT:70-200kHzVCE(on) typ. = 1.8V Extremely Low Switching Losses Maximum Junction Temperature 175 CGIC@TC=100C = 41A Short Circuit Rated 5SE

PD - 96353AAUIRGP4062DAUIRGP4062D-EINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 24A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtSC 5s, TJ(max) = 175C 5s SCSOA Square RBSOAEVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co

PD - 97726CAUTOMOTIVE GRADEAUIRGPS4067D1INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 160A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses 6s SCSOA G tSC 6s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.70V Positive VCE (on) Tempera

PD - 96353AUIRGB4062DAUIRGP4062DAUIRGP4062D-ECINSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 24A, TC = 100CFeatures Low VCE (on) Trench IGBT TechnologyGtSC 5s, TJ(max) = 175C Low Switching Losses 5s SCSOAE Square RBSOAVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

AUIRGP50B60PD1AUTOMOTIVE GRADE AUIRGP50B60PD1-EWARP2 SERIES IGBT WITHC VCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 2.00V@ VGE = 15V IC = 33AApplications Automotive HEV and EVEquivalent MOSFET PFC and ZVS SMPS CircuitsGParameters FeaturesRCE(on) typ. = 61mE Low VCE(ON) NPT Technology, Positive TemperatureID (FET equivalent) = 50ACoefficie

AUIRGP4062D1AUTOMOTIVE GRADE AUIRGP4062D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. EVCE(on) ty

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE CVCES = 600V INOMINAL = 24A E Tsc 6s, TJ(MAX) = 175C GC E G C G EVCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channelAUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E

AUIRGP4066D1AUTOMOTIVE GRADE AUIRGP4066D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeaturesIC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching lossesGtSC 5s, TJ(max) = 175C Maximum Junction temperature 175 C 5 S short circuit SOAEVCE(on) typ. = 1.70V Square RBSOAn-channel 100

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the

AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100C 6s SCSOA Gtsc 6s, TJ(MAX) = 175C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the

AUIRGP4062D AUIRGP4062D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC = 24A, TC = 100C 5s SCSOA GtSC 5s, TJ(max) = 175C Square RBSOA E 100% of The Parts Tested for ILM V typ. = 1.60V CE(on)n-channel