AUIRGSL30B60K Todos los transistores

 

AUIRGSL30B60K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRGSL30B60K
   Tipo de transistor: IGBT
   Código de marcado: AUGSL30B60K
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 370 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 78 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 28 nS
   Coesⓘ - Capacitancia de salida, typ: 160 pF
   Qgⓘ - Carga total de la puerta, typ: 102 nC
   Paquete / Cubierta: TO262
 

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AUIRGSL30B60K Datasheet (PDF)

 ..1. Size:305K  international rectifier
 auirgsl30b60k.pdf pdf_icon

AUIRGSL30B60K

PD - 96334AUTOMOTIVE GRADEAUIRGS30B60KAUIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Low VCE(on) Non Punch Through IGBT TechnologyIC = 50A, TC=100C 10s Short Circuit Capabilityat TJ=175C Square RBSOA Gtsc > 10s, TJ=150C Positive VCE(on) Temperature CoefficientE Maximum Junction Temperature rated at 175CVCE(on) typ.

 7.1. Size:415K  international rectifier
 auirgsl4062d1.pdf pdf_icon

AUIRGSL30B60K

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

 8.1. Size:305K  international rectifier
 auirgs30b60k.pdf pdf_icon

AUIRGSL30B60K

PD - 96334AUTOMOTIVE GRADEAUIRGS30B60KAUIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Low VCE(on) Non Punch Through IGBT TechnologyIC = 50A, TC=100C 10s Short Circuit Capabilityat TJ=175C Square RBSOA Gtsc > 10s, TJ=150C Positive VCE(on) Temperature CoefficientE Maximum Junction Temperature rated at 175CVCE(on) typ.

 8.2. Size:415K  international rectifier
 auirgs4062d1.pdf pdf_icon

AUIRGSL30B60K

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

MOSTRAR MÁS

Otros transistores... AUIRGP4066D1 , AUIRGP50B60PD1 , AUIRGPS4067D1 , AUIRGR4045D , SIW50N65G2H2G , AUIRGS30B60K , SIW50N65G2L2G , SIW75N65G2H2A , IKW40N65WR5 , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD , IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD .

 

 
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