IRG4BC30S-S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4BC30S-S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 34 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Coesⓘ - Capacitancia de salida, typ: 72 pF
Qgⓘ - Carga total de la puerta, typ: 50 nC
Paquete / Cubierta: D2PAK
- Selección de transistores por parámetros
IRG4BC30S-S Datasheet (PDF)
irg4bc30s-s.pdf
PD - 94069IRG4BC30S-SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
auirg4bc30s-s.pdf
AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (
auirg4bc30s-s auirg4bc30s-sl.pdf
AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (
irg4bc30s.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
Otros transistores... IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IHW15N120R3 , IRG4BC30U-S , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U .
History: HGT1S2N120CNDS
History: HGT1S2N120CNDS
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