IRG4BH20K-S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD -93960IRG4BH20K-SShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s @ VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 3.17VG switching speed Latest generation design provides tighter parameter@VGE = 15V, IC

PD -93961IRG4BH20K-LShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 3.17VG switching speed Latest generation design provides tighter parameter@VGE = 15V, IC =

PD- 91793IRG4BC20SD Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Extremely low voltage drop 1.4Vtyp. @ 10AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4VCE(on) typ. = 1.4V KHz in brushless DC drives.G Very Tig

PD -93769PROVISIONALIRG4BAC50WINSULATED GATE BIPOLAR TRANSISTORCFeatures Designed expressly for switch-mode powerVCES = 600V supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.30VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 27AE Low IGBT con

PD -91734BIRG4BC10KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.39V Combines low conduction losses with highG switching speed Tighter parameter distribut

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

PD - 91786BIRG4BC10S Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Extremely low voltage drop; 1.1V typical at 2A S-Speed: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz inVCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust

PD -91451BIRG4BC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and hig

PD -95965IRG4BC20FD-SPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeatures Fast: Optimized for medium operatingC frequencies ( 1-5 kHz in hard switching, >20VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.66VG Generation 3

IRG4BC30W-SINSULATED GATE BIPOLAR TRANSISTORFeatures C Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.10VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 12AE Low IGBT conduction lossesn-channe

PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VG

PD - 94069IRG4BC30S-SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD - 94909AIRG4BC20UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST UltraFast CoPack IGBTSOFT RECOVERY DIODEFeaturesC UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85V parameter distribution and higher efficiency thanG Generati

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

D IRG4BC10KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiencyVCE(on) typ. = 2.39VG than Generation 3 Industry standard TO-220

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design

PD - 93771PROVISIONALIRG4BAC50SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

D DI I TI T D T I T I T FeaturesFeaturesFeaturesFeaturesFeaturesC UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85VG parameter distribution and higher efficiency than Generatio

PD - 94083AIRG4BC15UD-SIRG4BC15UD-LINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard D2Pak & TO-262 packages@VGE = 15V,

PD -93770PROVISIONALIRG4BAC50UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE

PD - 94773IRG4BC30FD1Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeatures Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).VCE(on) typ. = 1.59VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than@VGE = 15V, IC = 17A Generation 3.

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation design

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

PD -91784BIRG4BC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1Vtyp. @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

PD 91677BIRG4BC10UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz inVCE(on) typ. = 2.15Vresonant modeG Generation 4 IGBT design provides tighter@VGE = 15V, IC = 5.0A parameter

PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VG

PD - 91455BIRG4BC40SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD-95640IRG4BC20WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction)VCES = 600V applications Industry-benchmark switching losses improveVCE(on) typ. = 2.16V efficiency of all power supply topologiesG 50% reduction of Eoff parameter Low IGBT conduction losses@VGE = 15V, IC = 6.5AE

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21V switching speed G Latest generation desig

PD -94910AIRG4BC30KDPbF Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures C High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed tighter parameter distribu

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation

PD - 94083AIRG4BC15UD-SIRG4BC15UD-LINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard D2Pak & TO-262 packages@VGE = 15V,

D I Short Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiencyG than Gen

PD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switch

PD -94116IRG4BC20MD-SShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Rugged: 10sec short circuit capable at VGS=15VVCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode VCE(on) typ. = 1.85VG Industry

PD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switch

IRG4BC20FDPbF Fast CoPack IGBT FeaturesC = G

PD - 94076IRG4BC20W-SINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.16VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, I

PD -91598AIRG4BC20KD-SINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on)

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VCES = 600V VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation desig

PD-91449CIRG4BC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution and higher efficiency than Generation 3

IRG4BC20KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesC GE =

PD - 91803IRG4BC30U-SUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 12AE Indust

D I I TI T D T I T I T Features C Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD- 94077IRG4BC20UD-S UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency than Generation 3@VG

D I I T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.70VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC

PD 91453BIRG4BC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

PD - 91654AIRG4BC40WINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.05VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC

PD - 96929IRG4BC30FD-SFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeaturesVCE(on) typ. = 1.59V Fast: optimized for medium operating frequenciesG (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter@VGE = 15V, IC = 17AE parameter distribution and higher efficiency than Generation

PD -91599AIRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on

PD -94115IRG4BC20MDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Rugged: 10sec short circuit capable at VGS=15VVCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode VCE(on) typ. = 1.85VG Industry s

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.66VG parameter distribution and higher efficiency than Generation 3@VG

PD-94810AIRG4BC30UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeatures UltraFast: Optimized for high operating C frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.95VG Generation

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VG

PD - 94082AIRG4BC15UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard TO-220AB package@VGE = 15V, IC = 7.8AEn-channe

PD -91794IRG4BC20SD-S Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Extremely low voltage drop 1.4Vtyp. @ 10AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4VCE(on) typ. = 1.4V KHz in brushless DC drives.G Very T

PD- 94151AIRG4BC15MDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Rugged: 10sec short circuit capable at VGS = 15VVCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88VG Indus