IRG4RC20F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4RC20F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 66 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 22 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.82 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 24 nS
Coesⓘ - Capacitancia de salida, typ: 37 pF
Paquete / Cubierta: TO252
Búsqueda de reemplazo de IRG4RC20F - IGBT
IRG4RC20F Datasheet (PDF)
irg4rc20f.pdf
PD - 91731AIRG4RC20FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.82V parameter distribution and higher efficiency than G previous generation IGBTs. Industry standard TO-252AA
irg4rc10s.pdf
PD- 91732BIRG4RC10Swww.irf.com 107/04/07IRG4RC10S1.82 www.irf.comIRG4RC10Swww.irf.com 3IRG4RC10S4 www.irf.comIRG4RC10Swww.irf.com 5IRG4RC10S6 www.irf.comIRG4RC10Swww.irf.com 7IRG4RC10SD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationNote: For the most current drawing please refer
irg4rc10sd.pdf
PD-91678BIRG4RC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1V(typ) @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4VCE(on) typ. = 1.10V KHz in brushless DC drives.G Tight parameter distribution IGBT
irg4rc10kd.pdf
PD 91736AIRG4RC10KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTCFeatures Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.39V Generation 4 IGBT design provides tighterG parameter distributio
irg4rc10ud.pdf
PD 91571AI UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).VCE(on) typ. = 2.15V Generation 4 IGBT design provides tighter parameter distribution a
irg4rc10u.pdf
PD - 91572AIRG4RC10UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) Generation 4 IGBT design provides tighterVCE(on) typ. = 2.15VG parameter distribution and higher efficiency than previous
irg4rc10k.pdf
PD 91735AIRG4RC10KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiencyVCE(on) typ. = 2.39VG than Generation 3 Industry standard TO-252AA
Otros transistores... IRG4PC50F-E , IRG4PC50SD , IRG4PC60F , IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , RJP30E2DPP-M0 , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U .
Liste
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