IRG7I313U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG7I313U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 34 W
|Vce|ⓘ - Tensión máxima colector-emisor: 330 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.21 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 13 nS
Coesⓘ - Capacitancia de salida, typ: 47 pF
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de IRG7I313U - IGBT
IRG7I313U Datasheet (PDF)
irg7i313u.pdf
PD - 97411IRG7I313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.35 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L
irg7i319u.pdf
PD -96273PDP TRENCH IGBTIRG7I319UPbFKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25C170 Acircuits in PDP applicationsTJ max150 Cl Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiencyl High repetitive peak current capabilityCl
irg7ic30fd.pdf
IRG7IC30FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE(on)VCES = 600V Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityINOM = 24A Square RBSOAVCE(on) typ. = 1.60VBenefits G Benchmark Efficiency for Motor ControlApplicationsE tSC 3s, TJ(max) = 150C Rugged Transient Performance
irg7ia19u.pdf
PD-96356PDP TRENCH IGBTIRG7IA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea
irg7ia13u.pdf
PD - 97636AIRG7IA13UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25Ccircuits in PDP applications 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L
irg7ic28u.pdf
PD - 97562IRG7IC28UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl
Otros transistores... IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IHW20N120R3 , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 .
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