IRG7PA19U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD-96357PDP TRENCH IGBTIRG7PA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C300 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)

IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100C tSC 10s, TJ(max) = 150C GC E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channelIRG7PH50K10DPbFIRG7PH50K10DEPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter So

IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS CVCES = 1200V Features Low VCE (ON) trench IGBT technology IC = 15A, TC = 100C Low switching losses TJ(MAX) = 150C G Square RBSOA Ultra-low VF diode VCE(ON) typ. = 1.95V E 1300Vpk repetitiv

PD - 97548IRG7PSH50UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight paramete

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE

IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR CVCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 35A, TC = 100C Low switching losses GTJ(MAX) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(ON) typ. = 1.9V@ IC = 20A Positive VCE (ON) temperature co-efficient n-channel Tight par

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

PD - 96409IRG7P313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20Al Optimized for Sustain and Energy Recovery 1.35 Vcircuits in PDP applicationsIRP max @ TC= 25C200 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Le

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

PD - 97723PDP TRENCH IGBTIRG7PC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

PD - 97403IRG7PH30K10DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low switching losses 10 S short circuit SOAIC = 16A, TC = 100C Square RBSOA 100% of the parts tested for ILM G tSC 10s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficient Ultra

PD - 96156AIRG7PH30K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low Switching Losses Maximum Junction Temperature 175 CIC = 23A, TC = 100C 10 S short Circuit SOA Square RBSOA GtSC 10s, TJ(max) =175C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-EfficientVC

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E GC C G G EVCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbFIRG7PH37K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collecto

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1400V CIC = 20A, TC =100C TJ(max) = 150C GE E C G C G VCE(ON) typ. = 2.0V @ IC = 20A EIRG7PK35UD1PbFIRG7PK35UD1EPbFn-channelTO247ACTO247ADApplications Induction heating G C E Microwave ovens Gate Colle

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100C tSC 10s, TJ(max) = 150C GE C E G C G EVCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbFIRG7PH44K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE

PD - 96305AIRG7PH46UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH46U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 75A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

PD - 97406AIRG7PSH73K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching LossesIC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOAGtSC 10s, TJ(max) =175C Square RBSOA 100% of The Parts Tested for ILMEVCE(on) typ. = 2.0V Positive VCE (ON) Temperatur

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR CVCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 45A, TC = 100C Low switching losses G Square RBSOA TJ(MAX) = 150C 100% of the parts tested for ILM EVCE(ON) typ. = 1.7V @ IC = 30A Positive VCE (ON) temperature co-efficient n-channel Ultra

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100C tSC 10s, TJ(max) = 150C E GC VCE(ON) typ. = 1.9V @ IC = 50A G En-channelIRG7PSH54K10DPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VC

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL