IRG7PSH73K10 Todos los transistores

 

IRG7PSH73K10 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG7PSH73K10

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1150

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.3

Corriente del colector DC máxima (Ic): 220

Empaquetado / Estuche: TO274AA

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IRG7PSH73K10 Datasheet (PDF)

0.1. irg7psh73k10.pdf Size:388K _international_rectifier

IRG7PSH73K10
IRG7PSH73K10

PD - 97406AIRG7PSH73K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching LossesIC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOAGtSC 10s, TJ(max) =175C Square RBSOA 100% of The Parts Tested for ILMEVCE(on) typ. = 2.0V Positive VCE (ON) Temperatur

7.1. irg7psh54k10d.pdf Size:764K _international_rectifier

IRG7PSH73K10
IRG7PSH73K10

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100C tSC 10s, TJ(max) = 150C E GC VCE(ON) typ. = 1.9V @ IC = 50A G En-channelIRG7PSH54K10DPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VC

7.2. irg7psh50ud.pdf Size:384K _international_rectifier

IRG7PSH73K10
IRG7PSH73K10

PD - 97548IRG7PSH50UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight paramete

Otros transistores... IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD , SGW10N60A , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD .

 

 
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