IRGB4061D
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGB4061D
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 206
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 36
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.65
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.5
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 25
nS
Coesⓘ - Capacitancia de salida, typ: 87
pF
Qgⓘ - Carga total de la puerta, typ: 35
nC
Paquete / Cubierta:
TO220AB
Búsqueda de reemplazo de IRGB4061D
- IGBT
IRGB4061D
Datasheet (PDF)
..1. Size:405K international rectifier
irgb4061d.pdf 
PD - 97189BIRGB4061DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 18A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)
7.1. Size:294K international rectifier
irgb4060d.pdf
PD - 97073BIRGB4060DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 8.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses Gtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAEVCE(on) typ. = 1.55V Square RBSOAn-channel 100% of The Parts Tested for 4X Rate
7.2. Size:434K international rectifier
irgb4062d.pdf
IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E
7.3. Size:621K international rectifier
auirgb4062d auirgp4062d auirgp4062d-e.pdf
PD - 96353AUIRGB4062DAUIRGP4062DAUIRGP4062D-ECINSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 24A, TC = 100CFeatures Low VCE (on) Trench IGBT TechnologyGtSC 5s, TJ(max) = 175C Low Switching Losses 5s SCSOAE Square RBSOAVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V
7.4. Size:374K international rectifier
irgb4064d.pdf
PD - 97113IRGB4064DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 10A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.6Vn-channel 100% of The Parts Tested for ILM
7.5. Size:415K international rectifier
auirgb4062d1.pdf
AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.
7.6. Size:415K infineon
irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf
IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E
Otros transistores... IRGB14C40L
, IRGB15B60KD
, IRGB20B60PD1
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, IRGB4045D
, IRGB4056D
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, SGP30N60
, IRGB4062D
, IRGB4064D
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, IRGB4B60KD1
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, IRGB6B60K
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.
