IRGP20B120U-E Todos los transistores

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IRGP20B120U-E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP20B120U-E

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 300W

Tensión colector-emisor (Vce): 1200V

Voltaje de saturación colector-emisor (Vce sat): 3.45V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 40A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IRGP20B120U-E Datasheet (PDF)

1.1. irgp20b120u-e.pdf Size:106K _international_rectifier

IRGP20B120U-E
IRGP20B120U-E

PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features UltraFast Non Punch Through (NPT) C Technology 10 s Short Circuit capability VCES = 1200V Square RBSOA Positive VCE(on) Temperature Coefficient VCE(on) typ. = 3.05V G Extended lead TO-247 package VGE = 15V, IC = 20A, 25C E Benefits n-channel Benchmark efficiency above 20KHz

1.2. irgp20b120ud-e.pdf Size:127K _international_rectifier

IRGP20B120U-E
IRGP20B120U-E

PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V UltraFast Non Punch Through (NPT) Technology VCE(on) typ. = 3.05V Low Diode VF (1.67V Typical @ 20A & 25C) 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 20A, 25C UltraSoft Diode Recovery Characteristics E Po

1.3. irgp20b120u-e.pdf Size:112K _igbt_a

IRGP20B120U-E
IRGP20B120U-E

PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through (NPT) C Technology • 10 µs Short Circuit capability VCES = 1200V • Square RBSOA • Positive VCE(on) Temperature Coefficient VCE(on) typ. = 3.05V G • Extended lead TO-247 package VGE = 15V, IC = 20A, 25°C E Benefits n-channel • Benchmark efficiency

1.4. irgp20b120ud-e.pdf Size:133K _igbt_a

IRGP20B120U-E
IRGP20B120U-E

PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through (NPT) Technology VCE(on) typ. = 3.05V • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability G • Square RBSOA VGE = 15V, IC = 20A, 25°C • UltraSoft Diode Recovery Characte

Otros transistores... IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E , IRGP4062D , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-E , IRGP4050 , IRGP4062D , IRGP4063 .

 


IRGP20B120U-E
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IRGP20B120U-E
  IRGP20B120U-E
  IRGP20B120U-E
 

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Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras