IRGP30B120KD-E
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP30B120KD-E
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.28
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 25
nS
Coesⓘ - Capacitancia de salida, typ: 210
pF
Qgⓘ - Carga total de la puerta, typ: 169
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de IRGP30B120KD-E
- IGBT
IRGP30B120KD-E
Datasheet (PDF)
..1. Size:312K international rectifier
irgp30b120kd-e.pdf 
PD- 93818AIRGP30B120KD-EINSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 1200V Low VCE(on) Non Punch Through (NPT)Technology Low Diode VF (1.76V Typical @ 25A & 25C)VCE(on) typ. = 2.28V 10 s Short Circuit Capability G Square RBSOAVGE = 15V, IC = 25A, 25C Ultrasoft Diode Recovery Ch
7.1. Size:270K international rectifier
irgp30b60kd-e.pdf
PD - 94388BIRGP30B60KD-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10s Short Circuit Capability.IC = 30A, TC=100C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.Gtsc > 10s, TJ=150C Positive VCE (on) Temperature Coeffici
9.1. Size:290K international rectifier
auirgp35b60pd.pdf
PD - 97675AUTOMOTIVE GRADEAUIRGP35B60PDWARP2 SERIES IGBT WITHC VCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 1.85VFeatures@ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT)Equivalent MOSFET Lower Parasitic CapacitancesG Minimal Tail CurrentParameters HEXFRED Ultra Fast Soft-Recovery Co-Pack DiodeRCE(on)
9.2. Size:353K international rectifier
irgp35b60pd.pdf
PD - 94623BSMPS IGBTIRGP35B60PDWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VVCE(on) typ. = 1.85VApplications@ VGE = 15V IC = 22A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFETG Consumer Electronics Power SuppliesParameters RCE(on) typ. = 84mEFeaturesID (FET equivalent) = 35
9.3. Size:396K international rectifier
auirgp35b60pd-e.pdf
PD - 97619AUTOMOTIVE GRADEAUIRGP35B60PD-EWARP2 SERIES IGBT WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 1.85VFeatures@ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT)Equivalent MOSFET Lower Parasitic CapacitancesGParameters Minimal Tail CurrentRCE(on) typ. = 84m HEXFRED Ultra Fast Soft-Recov
9.4. Size:408K international rectifier
irgp35b60pd-e.pdf
PD - 96169SMPS IGBTIRGP35B60PD-EPWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VVCE(on) typ. = 1.85VApplications@ VGE = 15V IC = 22A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFETG Consumer Electronics Power SuppliesParameters Lead-FreeRCE(on) typ. = 84mEFeaturesID (FET
9.5. Size:384K infineon
irgp35b60pdpbf.pdf
SMPS IGBT PD - 95329IRGP35B60PDPbFWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VVCE(on) typ. = 1.85VApplications@ VGE = 15V IC = 22A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFETG Consumer Electronics Power SuppliesParameters Lead-FreeRCE(on) typ. = 84mEFeaturesID (FET
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