IRGPS40B120U Todos los transistores

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IRGPS40B120U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGPS40B120U

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 595W

Tensión colector-emisor (Vce): 1200V

Voltaje de saturación colector-emisor (Vce sat): 3.5V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 80A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO274AA

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IRGPS40B120U Datasheet (PDF)

1.1. irgps40b120ud.pdf Size:117K _international_rectifier

IRGPS40B120U
IRGPS40B120U

PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. Low Diode VF. VCE(on) typ. = 3.12V 10s Short Circuit Capability. Square RBSOA. G @ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. E Supe

1.2. irgps40b120u.pdf Size:96K _international_rectifier

IRGPS40B120U
IRGPS40B120U

PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features Non Punch Through IGBT Technology. 10s Short Circuit Capability. VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient. G @ VGE = 15V, Super-247 Package. E ICE = 40A, Tj=25C N-channel Benefits Benchmark Efficienc

1.3. irgps40b120ud.pdf Size:134K _igbt

IRGPS40B120U
IRGPS40B120U

PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. VCE(on) typ. = 3.12V • 10µs Short Circuit Capability. • Square RBSOA. G @ VGE = 15V, • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coeffi

1.4. irgps40b120u.pdf Size:113K _igbt

IRGPS40B120U
IRGPS40B120U

PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. VCE(on) typ. = 3.12V • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G @ VGE = 15V, • Super-247 Package. E n-channel ICE = 40A, Tj=25°C Benefits • Benchmark Efficiency for Motor Control

Otros transistores... IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IXGR48N60C3D1 , IRGPS40B120UD , IRGPS60B120KD , IRGR3B60KD2 , IRGS10B60KD , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D .

 


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Introduzca al menos 1 números o letras