IRGPS60B120KD
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGPS60B120KD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 595
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.5
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 46
nS
Coesⓘ - Capacitancia de salida, typ: 420
pF
Qgⓘ - Carga total de la puerta, typ: 340
nC
Paquete / Cubierta: TO274AA
Búsqueda de reemplazo de IRGPS60B120KD
- IGBT
IRGPS60B120KD
Datasheet (PDF)
..1. Size:52K international rectifier
irgps60b120kd.pdf 
PROVISIONALPD - 94239IRGPS60B120KD Motor Control CoPack IGBTINSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 1200VFeatures Low VCE(on) Non Punch Through IGBT TechnologyVCE(on) typ. = 2.5V Low Diode VF 10s Short Circuit CapabilityG Square RBSOA@VGE = 15V, IC = 60A Ultrasoft Diode Reverse Recovery CharacteristicsE P
8.1. Size:661K international rectifier
irgps66160d.pdf
IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100C tSC 5s, TJ(max) = 175C GVCE(ON) typ. = 1.65V @ IC = 120A EIRGPS66160DPbFn-channelSuper247Applications Welding G C E H Bridge Converters Gate Collector EmitterFeatures Benefits Low VCE(ON) and Switching Losses H
9.1. Size:113K international rectifier
irgps40b120u.pdf
PD- 94295DIRGPS40B120UINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. 10s Short Circuit Capability.VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient.G@ VGE = 15V, Super-247 Package.En-channel ICE = 40A, Tj=25CBenefits Benchmark Efficiency for Motor Control
9.2. Size:306K international rectifier
auirgps4067d1.pdf
PD - 97726CAUTOMOTIVE GRADEAUIRGPS4067D1INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 160A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses 6s SCSOA G tSC 6s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.70V Positive VCE (on) Tempera
9.3. Size:272K international rectifier
irgps4067d.pdf
PD - 97736IRGPS4067DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching LossesIC(Nominal) = 120A 5s SCSOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.EVCE(on) typ. = 1.70V
9.4. Size:134K international rectifier
irgps40b120ud.pdf
PD- 94240AIRGPS40B120UDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. Low Diode VF.VCE(on) typ. = 3.12V 10s Short Circuit Capability. Square RBSOA.G@ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi
9.5. Size:335K international rectifier
irgps46160d.pdf
IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of a
9.6. Size:879K infineon
auirgps4070d0.pdf
AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100C 6s SCSOA Gtsc 6s, TJ(MAX) = 175C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V
9.7. Size:438K infineon
irgps46160dpbf.pdf
IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of
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