GT5G102 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GT5G102 Datasheet (PDF)

..1. Size:79K toshiba
gt5g102.pdf pdf_icon

GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Preliminary Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : V = 8 V (max) (I = 130 A) CE (sat) C Enhancement-mode 12 V gate drive Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-emitte

8.1. Size:134K toshiba
gt5g101.pdf pdf_icon

8.2. Size:369K toshiba
gt5g103.pdf pdf_icon

GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit: mm 3rd Generation (A) High Input Impedance Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement-Mode 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT (B) Collector-Emitter Voltage VCES 40

9.1. Size:224K toshiba
gt5g133.pdf pdf_icon

GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mmUnit: mm Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) Peak collector current: IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emi

Otros transistores... GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , RJH3047 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 .