IRGS10B60KD Todos los transistores

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 12A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive V

L IRGS14B40L INSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped 400V IGBT Co l l ect o r Rg Gat e Rg e 2 Em it te r D Pak MIN TYP MAX UNITS CONDITIONS VCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7A VECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE 24 30 V Ic = -10mA, 25 C VGE(TH) GATE - EMITTER THRESHOLD VOLTAGE 0.75 1.8 2.2 V Ic = 1 mA IC25 CONTINUOU

PD - 96358 IRGS15B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. IC = 15A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. Positive VCE (on) Temperature Coefficient. tsc > 10 s, TJ=150 C E Lead-Free n-channel VCE(on) typ. = 1.8V Benefits Benchmark Efficiency for Motor Control.

IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector CES = C C CE(on) R1 Gate R2 L(min)

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 15A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive V