IRGS10B60KD
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGS10B60KD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 156
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 22
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.8
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 5.5
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 20
nS
Coesⓘ - Capacitancia de salida, typ: 62
pF
Qgⓘ - Carga total de la puerta, typ: 38
nC
Paquete / Cubierta:
D2PAK
Búsqueda de reemplazo de IRGS10B60KD
- IGBT
IRGS10B60KD
Datasheet (PDF)
..1. Size:111K international rectifier
irgs10b60kd.pdf 
PD - 94925IRGB10B60KDPbFIRGS10B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL10B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 12A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive V
9.1. Size:50K international rectifier
irgs14b40l.pdf
LIRGS14B40LINSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped400V IGBTCo l l ect o rRgGat eRg e2Em it te rD PakMIN TYP MAX UNITS CONDITIONSVCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7AVECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE 24 30 V Ic = -10mA, 25 CVGE(TH) GATE - EMITTER THRESHOLD VOLTAGE 0.75 1.8 2.2 V Ic = 1 mAIC25 CONTINUOU
9.2. Size:259K international rectifier
irgs15b60k.pdf
PD - 96358IRGS15B60KPbFINSULATED GATE BIPOLAR TRANSISTORFeatures CVCES = 600V Low VCE (on) Non Punch Through IGBT Technology.IC = 15A, TC=100C 10s Short Circuit Capability.G Square RBSOA. Positive VCE (on) Temperature Coefficient. tsc > 10s, TJ=150CE Lead-Freen-channelVCE(on) typ. = 1.8VBenefits Benchmark Efficiency for Motor Control.
9.3. Size:160K international rectifier
irgs14c40l.pdf
IRGS14C40LIRGSL14C40LIgnition IGBTIRGB14C40LIGBT with on-chip Gate-Emitter and Gate-Collector clampsTERMINAL DIAGRAMCollector CES = C C CE(on) R1 GateR2 L(min)
9.4. Size:332K international rectifier
irgs15b60kd.pdf
PD - 95194IRGB15B60KDPbFIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA.Gtsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive V
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