IRGS4B60K IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGS4B60K
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 63 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
Tjⓘ -
Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
trⓘ - Tiempo de subida, typ: 18 nS
Coesⓘ - Capacitancia de salida, typ: 25 pF
Encapsulados: D2PAK
Búsqueda de reemplazo de IRGS4B60K IGBT
- Selección ⓘ de transistores por parámetros
IRGS4B60K datasheet
..1. Size:299K international rectifier
irgs4b60k.pdf 
PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 6.8A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G Maximum Junction Temperature rated at 175 C. tsc > 10 s, TJ=150 C E VCE(on) typ. = 2.1V Benefits
0.1. Size:437K international rectifier
irgb4b60kd1pbf irgs4b60kd1pbf irgsl4b60kd1pbf.pdf
PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperatu
0.2. Size:442K international rectifier
irgs4b60kd1.pdf
PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated
9.1. Size:672K international rectifier
irgs4715d.pdf
IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E C VCE(ON) typ. = 1.7V @ IC = 8A E G G G C E IRGS4715DPbF Applications IRGB4715DPbF n-channel D2 Pak TO 220AB Industrial Motor Drive UPS G C E Solar Inverters Ga
9.2. Size:332K international rectifier
irgs4045d.pdf
IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE C C IC 6.0A, TC = 100 C tsc > 5 s, Tjmax = 175 C E G G D2-Pak VCE(on) typ. 1.7V E IRGS4045DPbF n-channel Applications G C E Appliance Motor Drive Gate Colletor Emitter Inverters SMPS Features Benefits High efficiency in a wide range of applications and
9.3. Size:293K international rectifier
irgs4064d.pdf
PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tsc > 5 s, Tjmax = 175 C Maximum Junction temperature 175 C 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.6V 100% of The Parts Tested for (ILM) n-channel
9.4. Size:336K international rectifier
irgs4615d.pdf
IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C IC = 15A, TC = 100 C E E C G G tsc > 5 s, Tjmax = 175 C G E VCE(on) typ. = 1.55V @ 8A TO-220AB D2-Pak n-channel IRGB4615DPbF IRGS4615DPbF GCE Gate Collector Emitter Applications Appliance Drives Inverters UPS Features Benefits Low VCE(
9.5. Size:901K international rectifier
irgs4620d.pdf
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100 C E E E E C G C C C G tSC 5 s, TJ(max) = 175 C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel App
9.6. Size:858K international rectifier
irgs4607d.pdf
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100 C E E E G C C tSC 5 s, TJ(max) = 175 C G G G E IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive
9.7. Size:809K international rectifier
irgs4640d.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
9.8. Size:1268K international rectifier
irgs4630d.pdf
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 30A, TC =100 C E E E G E C tSC 5 s, TJ(max) = 175 C C C C G G G G E IRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl
9.9. Size:415K international rectifier
auirgs4062d1.pdf
AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.
9.10. Size:428K international rectifier
irgs4610d.pdf
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100 C E E E C G G G G tsc > 5 s, Tjmax = 175 C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter Appliance Drives Inverters
9.11. Size:460K international rectifier
irgs4062d.pdf
PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G Square RBSOA tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated cur
9.12. Size:404K international rectifier
irgs4056d.pdf
PD - 96197 IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 12A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM)
9.13. Size:317K international rectifier
irgs4086.pdf
PD - 96222 IRGB4086PbF PDP TRENCH IGBT IRGS4086PbF Key Parameters Features VCE min 300 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 70A l Optimized for Sustain and Energy Recovery 1.90 V Circuits in PDP Applications IRP max @ TC= 25 C A 250 l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for Improved Panel Efficiency l High Repetitive Peak Current Capabi
9.14. Size:966K infineon
irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf
IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust
9.15. Size:1323K infineon
irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf
IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust
9.16. Size:792K infineon
irgs4640dpbf irgsl4640dpbf irgb4640dpbf irgp4640dpbf irgp4640d-epbf.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
Otros transistores... IRGR3B60KD2
, IRGS10B60KD
, IRGS15B60K
, IRGS15B60KD
, IRGS30B60K
, IRGS4056D
, IRGS4062D
, IRGS4086
, GT50JR22
, IRGS4B60KD1
, IRGS6B60K
, IRGS6B60KD
, IRGS8B60K
, IRGSL10B60KD
, IRGSL14C40L
, IRGSL15B60KD
, IRGSL30B60K
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