RJH1CV5DPQ-E0 Todos los transistores

 ..1. Size:98K  renesas
 rjh1cv5dpq-e0.pdf

Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ0500 1200V - 25A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wa

 4.1. Size:53K  renesas
 r07ds0523ej rjh1cv5dpq.pdf

Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ0300 1200 V - 25 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 5.1. Size:129K  renesas
 rjh1cv5dpk.pdf

Preliminary Datasheet RJH1CV5DPK R07DS0746EJ0300 1200V - 25A - IGBT Rev.3.00 Application Inverter Feb 14, 2013 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wafer

 8.1. Size:98K  renesas
 rjh1cv7dpq-e0.pdf

Preliminary Datasheet RJH1CV7DPQ-E0 R07DS0525EJ0500 1200V - 35A - IGBT Rev.5.00 Application Inverter May 24, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wa

 8.2. Size:127K  renesas
 rjh1cv7dpk.pdf

Preliminary Datasheet RJH1CV7DPK R07DS0748EJ0300 1200V - 35A - IGBT Rev.3.00 Application Inverter Feb 14, 2013 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer

 8.3. Size:53K  renesas
 r07ds0525ej rjh1cv7dpq.pdf

Preliminary Datasheet RJH1CV7DPQ-E0 R07DS0525EJ0300 1200 V - 35 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 8.4. Size:53K  renesas
 r07ds0524ej rjh1cv6dpq.pdf

Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ0300 1200 V - 30 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 8.5. Size:127K  renesas
 rjh1cv6dpk.pdf

Preliminary Datasheet RJH1CV6DPK R07DS0747EJ0300 1200V - 30A - IGBT Rev.3.00 Application Inverter Feb 14, 2013 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wafer

 8.6. Size:98K  renesas
 rjh1cv6dpq-e0.pdf

Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ0500 1200V - 30A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa