GT60J101 Todos los transistores

 

GT60J101 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GT60J101

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4(max) V @25℃

Encapsulados: TO3P

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GT60J101 datasheet

 9.1. Size:175K  toshiba
gt60j323.pdf pdf_icon

GT60J101

GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application Unit mm Enhancement mode type High speed tf = 0.16 s (typ.) (IC = 60A) Low saturation voltage VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba

 9.2. Size:227K  toshiba
gt60j323h.pdf pdf_icon

GT60J101

GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Unit mm Induction Heating Cooking Appliances Induction Heating Appliances Enhancement mode type High speed tf = 0.12 s (typ.) (IC = 60A) Low saturation voltage VCE (sat) = 2.1 V (typ.) (IC = 60A) FRD included between emit

 9.3. Size:39K  apt
apt60gt60jr.pdf pdf_icon

GT60J101

APT60GT60JR 600V 90A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 150KHz C Low Tail Current Ultra Low Leakage Current Avalanche

Otros transistores... GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , FGPF4633 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 .

 

 

 


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