RJH60M3DPE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60M3DPE
Tipo de transistor: IGBT
Polaridad de transistor: N-Channel
Tensión máxima colector-emisor |Vce|, V: 600
Colector de Corriente Continua a 25℃ |Ic|, A: 35
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Tiempo de subida (tr), typ, nS: 80
Paquete / Cubierta: LDPAK(S)
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RJH60M3DPE Datasheet (PDF)
rjh60m3dpe.pdf
Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer technol
r07ds0533ej rjh60m3dpe.pdf
Preliminary DatasheetRJH60M3DPE R07DS0533EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0532ej rjh60m3dpp.pdf
Preliminary DatasheetRJH60M3DPP-M0 R07DS0532EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0534ej rjh60m3dpq.pdf
Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60m3dpq-a0.pdf
Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60m3dpp-m0.pdf
Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer tech
Otros transistores... RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , FGW75N60HD , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 .
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