RJH60M5DPQ-A0 Todos los transistores

 

RJH60M5DPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60M5DPQ-A0

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.8

Corriente del colector DC máxima (Ic): 75

Tiempo de elevación: 80

Empaquetado / Estuche: TO247A

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RJH60M5DPQ-A0 Datasheet (PDF)

..1. rjh60m5dpq-a0.pdf Size:54K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M5DPQ-A0 R07DS0536EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

4.1. r07ds0536ej rjh60m5dpq.pdf Size:53K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M5DPQ-A0 R07DS0536EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.1. r07ds0532ej rjh60m3dpp.pdf Size:54K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M3DPP-M0 R07DS0532EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.2. rjh60m1dpp-m0.pdf Size:102K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (75 ns typ.) in one package Trench gate and thin wafer techno

 8.3. rjh60m3dpe.pdf Size:97K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer technol

8.4. rjh60m2dpp-m0.pdf Size:101K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech

 8.5. r07ds0533ej rjh60m3dpe.pdf Size:41K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M3DPE R07DS0533EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

8.6. r07ds0534ej rjh60m3dpq.pdf Size:53K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.7. rjh60m6dpq-a0.pdf Size:54K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M6DPQ-A0 R07DS0537EJ0100600 V - 40 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.8. r07ds0538ej rjh60m7dpq.pdf Size:53K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M7DPQ-A0 R07DS0538EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.9. r07ds0531ej rjh60m2dpe.pdf Size:53K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M2DPE R07DS0531EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Aug 30, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

8.10. r07ds0529ej rjh60m1dpe.pdf Size:53K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M1DPE R07DS0529EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

8.11. rjh60m7dpq-a0.pdf Size:54K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M7DPQ-A0 R07DS0538EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.12. rjh60m3dpq-a0.pdf Size:50K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.13. rjh60m2dpe.pdf Size:96K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol

8.14. rjh60m1dpe.pdf Size:97K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

8.15. r07ds0537ej rjh60m6dpq.pdf Size:53K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M6DPQ-A0 R07DS0537EJ0100600 V - 40 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.16. r07ds0535ej rjh60m0dpq.pdf Size:53K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M0DPQ-A0 R07DS0535EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.17. rjh60m3dpp-m0.pdf Size:102K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer tech

8.18. r07ds0530ej rjh60m2dpp.pdf Size:54K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M2DPP-M0 R07DS0530EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.19. rjh60m0dpq-a0.pdf Size:50K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M0DPQ-A0 R07DS0535EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

8.20. r07ds0528ej rjh60m1dpp.pdf Size:54K _renesas

RJH60M5DPQ-A0 RJH60M5DPQ-A0

Preliminary DatasheetRJH60M1DPP-M0 R07DS0528EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn

Otros transistores... RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , FGPF4533 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 .

 

 
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