RJH60M6DPQ-A0 Todos los transistores

 

RJH60M6DPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJH60M6DPQ-A0
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 260
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 40
   Capacitancia de salida (Cc), typ, pF: 140
   Carga total de la puerta (Qg), typ, nC: 104
   Paquete / Cubierta: TO247A

 Búsqueda de reemplazo de RJH60M6DPQ-A0 - IGBT

 

RJH60M6DPQ-A0 Datasheet (PDF)

 ..1. Size:54K  renesas
rjh60m6dpq-a0.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M6DPQ-A0 R07DS0537EJ0100600 V - 40 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 4.1. Size:53K  renesas
r07ds0537ej rjh60m6dpq.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M6DPQ-A0 R07DS0537EJ0100600 V - 40 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.1. Size:53K  renesas
r07ds0531ej rjh60m2dpe.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M2DPE R07DS0531EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Aug 30, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 8.2. Size:54K  renesas
r07ds0530ej rjh60m2dpp.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M2DPP-M0 R07DS0530EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.3. Size:53K  renesas
r07ds0535ej rjh60m0dpq.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M0DPQ-A0 R07DS0535EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.4. Size:54K  renesas
rjh60m7dpq-a0.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M7DPQ-A0 R07DS0538EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.5. Size:41K  renesas
r07ds0533ej rjh60m3dpe.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M3DPE R07DS0533EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 8.6. Size:50K  renesas
rjh60m0dpq-a0.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M0DPQ-A0 R07DS0535EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.7. Size:54K  renesas
r07ds0528ej rjh60m1dpp.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M1DPP-M0 R07DS0528EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn

 8.8. Size:97K  renesas
rjh60m3dpe.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer technol

 8.9. Size:53K  renesas
r07ds0529ej rjh60m1dpe.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M1DPE R07DS0529EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

 8.10. Size:53K  renesas
r07ds0536ej rjh60m5dpq.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M5DPQ-A0 R07DS0536EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.11. Size:54K  renesas
rjh60m5dpq-a0.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M5DPQ-A0 R07DS0536EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.12. Size:101K  renesas
rjh60m2dpp-m0.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech

 8.13. Size:50K  renesas
rjh60m3dpq-a0.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.14. Size:96K  renesas
rjh60m2dpe.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol

 8.15. Size:53K  renesas
r07ds0538ej rjh60m7dpq.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M7DPQ-A0 R07DS0538EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.16. Size:102K  renesas
rjh60m3dpp-m0.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer tech

 8.17. Size:54K  renesas
r07ds0532ej rjh60m3dpp.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M3DPP-M0 R07DS0532EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 8.18. Size:97K  renesas
rjh60m1dpe.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

 8.19. Size:102K  renesas
rjh60m1dpp-m0.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (75 ns typ.) in one package Trench gate and thin wafer techno

 8.20. Size:53K  renesas
r07ds0534ej rjh60m3dpq.pdf

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

Otros transistores... RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , SGT40N60FD2PT , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 .

 

 
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