RJP6065DPM Todos los transistores

 

RJP6065DPM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJP6065DPM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 50
   Tensión máxima colector-emisor |Vce|, V: 630
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 40
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 90
   Capacitancia de salida (Cc), typ, pF: 95
   Paquete / Cubierta: TO3PFM

 Búsqueda de reemplazo de RJP6065DPM - IGBT

 

RJP6065DPM Datasheet (PDF)

 ..1. Size:79K  renesas
rjp6065dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 19, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A(Package

 ..2. Size:82K  renesas
r07ds0204ej rjp6065dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 19, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A(Package

 9.1. Size:75K  renesas
r07ds0088ej rjp60d0dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin

 9.2. Size:79K  renesas
rjp60f0dpe.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

 9.3. Size:80K  renesas
r07ds0585ej rjp60f0dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 9.4. Size:78K  renesas
r07ds0166ej rjp60d0dpk.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 9.5. Size:75K  renesas
rjp60d0dpk.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jul 13, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 9.6. Size:79K  renesas
r07ds0173ej rjp60d0dpp.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou

 9.7. Size:115K  renesas
rej03g1863 rjp6085dpnds.pdf

RJP6065DPM
RJP6065DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:81K  renesas
r07ds0587ej rjp60f5dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100600 V - 40 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 9.9. Size:115K  renesas
rjp6085dpk.pdf

RJP6065DPM
RJP6065DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:75K  renesas
rjp60f5dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200600V - 40A - IGBT Rev.2.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25

 9.11. Size:77K  renesas
r07ds0172ej rjp60d0dpe.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 9.12. Size:76K  renesas
rjp60f4dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 9.13. Size:74K  renesas
rjp60d0dpe.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli

 9.14. Size:77K  renesas
rjp60f5dpk.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Pack

 9.15. Size:72K  renesas
rjp60d0dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin

 9.16. Size:81K  renesas
r07ds0540ej rjp60f0dpe.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

 9.17. Size:79K  renesas
r07ds0586ej rjp60f4dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 9.18. Size:118K  renesas
rej03g1862 rjp6085dpkds.pdf

RJP6065DPM
RJP6065DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.19. Size:112K  renesas
rjp6085dpn-00.pdf

RJP6065DPM
RJP6065DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.20. Size:91K  renesas
rjp6016jpe.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP6016JPE R07DS0878EJ0100600 V - 40 A- N Channel IGBT Rev.1.00High Speed Power Switching Sep 19, 2012Features For Automotive application AEC-Q101 compliant Low collector to emitter saturation voltage. VCE(sat) = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )

 9.21. Size:82K  renesas
rjp60v0dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60V0DPM R07DS0669EJ0100600V - 22A - IGBT Rev.1.00Application: Inverter Feb 07, 2012Features High breakdown-voltage Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Short circuit withstand time (6 s typ.) Trench gate and thin wafer technology (G6H series) Outline RENES

 9.22. Size:77K  renesas
rjp60f0dpm.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 9.23. Size:76K  renesas
rjp60d0dpp-m0.pdf

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou

Otros transistores... RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , IRG4PF50W , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 .

 

 
Back to Top

 


RJP6065DPM
  RJP6065DPM
  RJP6065DPM
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
Back to Top