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Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0003ZA-A (Package ... See More ⇒

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0003ZA-A (Package ... See More ⇒

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin... See More ⇒

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = ... See More ⇒

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C... See More ⇒

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jul 13, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli... See More ⇒

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jul 13, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli... See More ⇒

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Mar 11, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100 600 V - 40 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli... See More ⇒

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100 600 V - 30 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C ... See More ⇒

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outli... See More ⇒

Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching May 31, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Pack... See More ⇒

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outlin... See More ⇒

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = ... See More ⇒

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100 600 V - 30 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJP6016JPE R07DS0878EJ0100 600 V - 40 A- N Channel IGBT Rev.1.00 High Speed Power Switching Sep 19, 2012 Features For Automotive application AEC-Q101 compliant Low collector to emitter saturation voltage. VCE(sat) = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) ... See More ⇒

Preliminary Datasheet RJP60V0DPM R07DS0669EJ0100 600V - 22A - IGBT Rev.1.00 Application Inverter Feb 07, 2012 Features High breakdown-voltage Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Short circuit withstand time (6 s typ.) Trench gate and thin wafer technology (G6H series) Outline RENES... See More ⇒

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C... See More ⇒

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Mar 11, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Ou... See More ⇒