RJP60F0DPM Todos los transistores

 

RJP60F0DPM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP60F0DPM

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.4

Corriente del colector DC máxima (Ic): 50

Tiempo de elevación: 90

Empaquetado / Estuche: TO3PFM

Búsqueda de reemplazo de RJP60F0DPM - IGBT

 

RJP60F0DPM Datasheet (PDF)

..1. r07ds0585ej rjp60f0dpm.pdf Size:80K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

..2. rjp60f0dpm.pdf Size:77K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

5.1. rjp60f0dpe.pdf Size:79K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

5.2. r07ds0540ej rjp60f0dpe.pdf Size:81K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

 8.1. rjp60f5dpk.pdf Size:77K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Pack

8.2. r07ds0586ej rjp60f4dpm.pdf Size:79K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

 8.3. rjp60f4dpm.pdf Size:76K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

8.4. rjp60f5dpm.pdf Size:75K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200600V - 40A - IGBT Rev.2.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25

 8.5. r07ds0587ej rjp60f5dpm.pdf Size:81K _renesas

RJP60F0DPM RJP60F0DPM

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100600 V - 40 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

Otros transistores... RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , HGTG30N60A4 , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK .

 

 
Back to Top

 


RJP60F0DPM
  RJP60F0DPM
  RJP60F0DPM
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: CI20T120P | 2M410G | 2M410V1 | 2M410V | 2M410B1 | 2M410B | 2M410A | JT015N065FED | FGA25S125P | MMGTU75J120U | MMGT75WD120XB6C

 

 

 
Back to Top