RJP60F5DPM Datasheet. Equivalente

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 r07ds0587ej rjp60f5dpm.pdf

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100 600 V - 40 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C

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 rjp60f5dpm.pdf

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 rjp60f5dpk.pdf

Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching May 31, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Pack

 8.1. Size:79K  renesas
 rjp60f0dpe.pdf

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

 8.2. Size:80K  renesas
 r07ds0585ej rjp60f0dpm.pdf

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C

 8.3. Size:76K  renesas
 rjp60f4dpm.pdf

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100 600 V - 30 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C

 8.4. Size:81K  renesas
 r07ds0540ej rjp60f0dpe.pdf

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

 8.5. Size:79K  renesas
 r07ds0586ej rjp60f4dpm.pdf

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100 600 V - 30 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C

 8.6. Size:77K  renesas
 rjp60f0dpm.pdf

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C