RJH60C9DPD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60C9DPD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 45 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 19 pF
Qgⓘ - Carga total de la puerta, typ: 8 nC
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de RJH60C9DPD - IGBT
RJH60C9DPD Datasheet (PDF)
rjh60c9dpd.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1838 rjh60c9dpdds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
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Preliminary DatasheetRJH60M2DPE R07DS0531EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Aug 30, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
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Preliminary DatasheetRJH60M2DPP-M0 R07DS0530EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
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Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
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Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
r07ds0328ej rjh60f7dpq.pdf
Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns
rjh60d0dpk.pdf
Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400600V - 22A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60f0dpq-a0.pdf
Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
rjh60d5dpm.pdf
Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200600V - 37A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh6087bdpk.pdf
Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat
rjh60f6bdpq-a0.pdf
Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100600V - 45A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at
rjh60f5bdpq-a0.pdf
Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC
rjh60f7adpk.pdf
Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed
rjh60a83rdpe.pdf
Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130 ns
rjh60v2bdpp-m0.pdf
Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec
r07ds0176ej rjh60d7dpm.pdf
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60f6dpq-a0.pdf
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
rjh60d2dpe.pdf
Preliminary Datasheet RJH60D2DPE R07DS0159EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60f4dpq-a0.pdf
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200600 V - 30 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at
r07ds0535ej rjh60m0dpq.pdf
Preliminary DatasheetRJH60M0DPQ-A0 R07DS0535EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0236ej rjh60f6dpk.pdf
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
rjh60d0dpm.pdf
Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300600V - 22A - IGBT Rev.3.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
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Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat
rjh60f0dpk.pdf
Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
rjh60v3bdpp-m0.pdf
Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100600V - 17A - IGBT Rev.1.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec
rjh60m7dpq-a0.pdf
Preliminary DatasheetRJH60M7DPQ-A0 R07DS0538EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60d1dpp-e0.pdf
Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100600V - 10A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech
rjh60d0dpq-a0.pdf
Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0547ej rjh60d7adp.pdf
Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 28, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60a83rdpp-m0.pdf
Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130
r07ds0460ej rjh60t4dpq.pdf
Preliminary Datasheet RJH60T4DPQ-A0 R07DS0460EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Jun 15, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESA
rjh60d6dpk.pdf
Preliminary Datasheet RJH60D6DPK R07DS0164EJ0400600V - 40A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0237ej rjh60f7adp.pdf
Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed
r07ds0533ej rjh60m3dpe.pdf
Preliminary DatasheetRJH60M3DPE R07DS0533EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0165ej rjh60d7dpk.pdf
Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60m0dpq-a0.pdf
Preliminary DatasheetRJH60M0DPQ-A0 R07DS0535EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0199ej rjh60f3dpk.pdf
Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
rjh60f7dpq-a0.pdf
Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns
rjh60d1dpp-m0.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer tech
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Preliminary DatasheetRJH60M1DPP-M0 R07DS0528EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn
rjh60m3dpe.pdf
Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer technol
r07ds0529ej rjh60m1dpe.pdf
Preliminary DatasheetRJH60M1DPE R07DS0529EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo
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Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Mar 09, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
rjh60d1dpe.pdf
Preliminary Datasheet RJH60D1DPE R07DS0157EJ0400600V - 10A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
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Preliminary DatasheetRJH60M5DPQ-A0 R07DS0536EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh6086bdpk.pdf
Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100600 V - 45 A - IGBT Rev.1.00High Speed Power Switching Sep 28, 2011Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. G
r07ds0160ej rjh60d2dpp.pdf
Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
rjh60m5dpq-a0.pdf
Preliminary DatasheetRJH60M5DPQ-A0 R07DS0536EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0175ej rjh60d6dpm.pdf
Preliminary Datasheet RJH60D6DPM R07DS0175EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0235ej rjh60f4dpk.pdf
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300(Previous: REJ03G1835-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 17, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw
rjh60d7dpk.pdf
Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60a85rdpe.pdf
Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160 ns
rjh60m2dpp-m0.pdf
Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech
r07ds0174ej rjh60d5dpm.pdf
Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100Silicon N Channel IGBT Rev.1.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60m3dpq-a0.pdf
Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60d5dpk.pdf
Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400600V - 37A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0158ej rjh60d1dpp.pdf
Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe
rjh60m2dpe.pdf
Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol
rjh60f6dpk.pdf
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
rjh60v3bdpe.pdf
Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200600V - 17A - IGBT Rev.2.00Application: Inverter May 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno
r07ds0161ej rjh60d3dpe.pdf
Preliminary Datasheet RJH60D3DPE R07DS0161EJ0400Silicon N Channel IGBT Rev.4.00Application: Inverter Mar 09, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60v2bdpe.pdf
Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Apr 25, 2012Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno
rjh60d7dpq-e0.pdf
Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100600V - 50A - IGBT Rev.1.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0538ej rjh60m7dpq.pdf
Preliminary DatasheetRJH60M7DPQ-A0 R07DS0538EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60m3dpp-m0.pdf
Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0300600V - 17A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (90 ns typ.) in one package Trench gate and thin wafer tech
r07ds0055ej rjh60f5dpk.pdf
Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 24, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
r07ds0532ej rjh60m3dpp.pdf
Preliminary DatasheetRJH60M3DPP-M0 R07DS0532EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0389ej rjh6087bdp.pdf
Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat
r07ds0391ej rjh60f3dpq.pdf
Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
rjh60a85rdpp-m0.pdf
Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160
rjh60d3dpp-m0.pdf
Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0400600V - 17A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60v1bdpe.pdf
Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200600 V - 8 A - IGBT Rev.2.00Application: Inverter May 25, 2011Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno
rjh60d7adpk.pdf
Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0200600V - 50A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn
r07ds0155ej rjh60d0dpk.pdf
Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0325ej rjh60f4dpq.pdf
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200600 V - 30 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at
rjh60m6dpq-a0.pdf
Preliminary DatasheetRJH60M6DPQ-A0 R07DS0537EJ0100600 V - 40 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0156ej rjh60d0dpm.pdf
Preliminary Datasheet RJH60D0DPM R07DS0156EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0163ej rjh60d5dpk.pdf
Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0470ej rjh6086bpk.pdf
Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100600 V - 45 A - IGBT Rev.1.00High Speed Power Switching Sep 28, 2011Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. G
rjh60d5dpq-a0.pdf
Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d7bdpq-e0.pdf
Preliminary Datasheet RJH60D7BDPQ-E0 R07DS0795EJ0200600V - 50A - IGBT Rev.2.00Application: Inverter Jul 13, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec
rjh60f3dpk.pdf
Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
rjh60d7dpm.pdf
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Dec 07, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60f7bdpq-a0.pdf
Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100600V - 50A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at
rjh60f5dpk.pdf
Preliminary www.DataSheet4U.comRJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Max
rjh60v1bdpp-m0.pdf
Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100600V - 8A - IGBT Rev.1.00Application: Inverter May 25, 2011Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techn
rjh60m1dpe.pdf
Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo
r07ds0537ej rjh60m6dpq.pdf
Preliminary DatasheetRJH60M6DPQ-A0 R07DS0537EJ0100600 V - 40 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60f4dpk.pdf
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300(Previous: REJ03G1835-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 17, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw
rjh60m1dpp-m0.pdf
Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (75 ns typ.) in one package Trench gate and thin wafer techno
r07ds0327ej rjh60f6dpq.pdf
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
r07ds0326ej rjh60f5dpq.pdf
Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
rjh60d2dpp-e0.pdf
Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh6088bdpk.pdf
Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat
rjh60d3dpe.pdf
Preliminary Datasheet RJH60D3DPE R07DS0161EJ0500600V - 17A - IGBT Rev.5.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60f5dpq-a0.pdf
Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
r07ds0164ej rjh60d6dpk.pdf
Preliminary Datasheet RJH60D6DPK R07DS0164EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d6dpm.pdf
Preliminary Datasheet RJH60D6DPM R07DS0175EJ0300600V - 40A - IGBT Rev.3.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60d2dpp-m0.pdf
Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0534ej rjh60m3dpq.pdf
Preliminary DatasheetRJH60M3DPQ-A0 R07DS0534EJ0100600 V - 17 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0159ej rjh60d2dpe.pdf
Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0526ej rjh60d0dpq.pdf
Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
Otros transistores... RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK , SGT60U65FD1PT , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , RJH60D3DPP-M0 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2