TIG111BF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIG111BF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 25 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 30 pF
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de TIG111BF - IGBT
TIG111BF Datasheet (PDF)
tig111bf.pdf
TIG111BFOrdering number : EN9017ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter
tig111gmh.pdf
TIG111GMHOrdering number : EN9014SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte
tig110bf.pdf
TIG110BFOrdering number : EN9013ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter
tig110gmh.pdf
TIG110GMHOrdering number : EN9018SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte
Otros transistores... RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , GT30F124 , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2