TIG111BF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIG111BF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 25 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 30 pF

Encapsulados: TO220F

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TIG111BF datasheet

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TIG111BF

TIG111BF Ordering number EN9017A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter

 8.1. Size:474K  sanyo
 tig111gmh.pdf pdf_icon

TIG111BF

TIG111GMH Ordering number EN9014 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte

 9.1. Size:463K  sanyo
 tig110bf.pdf pdf_icon

TIG111BF

TIG110BF Ordering number EN9013A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter

 9.2. Size:479K  sanyo
 tig110gmh.pdf pdf_icon

TIG111BF

TIG110GMH Ordering number EN9018 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte

MOSTRAR MÁS

Otros transistores... RJP60D0DPK, RJH60D5DPK, RJH60D6DPK, RJH60D7DPK, RJH60D0DPK, RJP60D0DPM, TIG110BF, TIG110GMH, GT30F124, TIG111GMH, TIG052TS, TIG056BF, TIG058E8, TIG062E8, TIG064E8, TIG065E8, TIG066SS