TIG111BF Todos los transistores

 

TIG111BF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIG111BF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 25 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 30 pF
   Paquete / Cubierta: TO220F
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TIG111BF Datasheet (PDF)

 ..1. Size:461K  sanyo
tig111bf.pdf pdf_icon

TIG111BF

TIG111BFOrdering number : EN9017ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter

 8.1. Size:474K  sanyo
tig111gmh.pdf pdf_icon

TIG111BF

TIG111GMHOrdering number : EN9014SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG111GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte

 9.1. Size:463K  sanyo
tig110bf.pdf pdf_icon

TIG111BF

TIG110BFOrdering number : EN9013ASANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitter

 9.2. Size:479K  sanyo
tig110gmh.pdf pdf_icon

TIG111BF

TIG110GMHOrdering number : EN9018SANYO SemiconductorsDATA SHEETN-Channel Non Punch Through IGBTTIG110GMHHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25C, Unless otherwise specifiedParameter Symbol Conditions Ratings UnitCollector-to-Emitte

Otros transistores... RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , GT30F124 , TIG111GMH , TIG052TS , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS .

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