TIG052TS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIG052TS
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(pulse) A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Coesⓘ - Capacitancia de salida, typ: 58 pF
Paquete / Cubierta: TSSOP8
Búsqueda de reemplazo de TIG052TS - IGBT
TIG052TS Datasheet (PDF)
tig052ts.pdf
Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2
tig052gs.pdf
Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2
tig056bf.pdf
TIG056BF Ordering number : ENA1775ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG056BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Volta
tig058e8.pdf
TIG058E8Ordering number : ENA1381SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG058E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance.Specifications a
tig056bf-1e tig056bf.pdf
Ordering number : ENA1775BTIG056BFN-Channel IGBThttp://onsemi.com430V, 240A, VCE(sat); 3.6V TO-220F-3FSFeatures Low-saturation voltage Protection diode in Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector to Emitter Voltage VCES 430 VGate to Emitter Voltage VGES
tig058e8.pdf
Ordering number : ENA1381ATIG058E8N-Channel IGBThttp://onsemi.com( );400V, 150A, VCE sat 4V, Single ECH8Features Low-saturation voltage Low voltage drive (4V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee* Halogen free complianceSpecificationsAbsolute Maximum Ratings
Otros transistores... RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , GT30J124 , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S .
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