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TIG052TS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIG052TS
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Código de marcado: G052
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(pulse) A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Coesⓘ - Capacitancia de salida, typ: 58 pF
   Paquete / Cubierta: TSSOP8
     - Selección de transistores por parámetros

 

TIG052TS Datasheet (PDF)

 ..1. Size:61K  1
tig052ts.pdf pdf_icon

TIG052TS

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

 8.1. Size:61K  sanyo
tig052gs.pdf pdf_icon

TIG052TS

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

 9.1. Size:324K  sanyo
tig056bf.pdf pdf_icon

TIG052TS

TIG056BF Ordering number : ENA1775ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG056BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Volta

 9.2. Size:343K  sanyo
tig058e8.pdf pdf_icon

TIG052TS

TIG058E8Ordering number : ENA1381SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG058E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance.Specifications a

Otros transistores... RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , FGH40N60UFD , TIG056BF , TIG058E8 , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S .

 

 
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